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Power MOSFETs
2SK3637
Silicon N-channel power MOSFET
15.50.5
Unit: mm
3.20.1 5 3.00.3 5
For PDP/For high-speed switching
(10.0) 26.50.5
(4.5)
* Low on-resistance, low Qg * High avalanche resistance
(2.0)
5 (4.0) 2.00.2 1.10.1 0.70.1 5.450.3 10.90.5 5 5
Absolute Maximum Ratings TC = 25C
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 30 50 200 2 000 100 3 150 -55 to +150 C C Unit V
3.30.3
A A mJ W
5
1
2
3
5.50.3
V
18.60.5 (2.0) Solder Dip
1: Gate 2: Drain 3: Source TOP-3E-A1 Package
Internal Connection
Channel temperature Storage temperature
(2.0)
D G S
Note) *: L = 0.8 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25C
Electrical Characteristics TC = 25C 3C
Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol VDSS VDSF Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf trr Qrr L = 230 H, VDD = 100 V IDR = 25 A, di /dt = 100 A/ s VDD = 100 V, ID = 25 A RL = 4 , VGS = 10 V Conditions ID = 1 mA, VGS = 0 IDR = 50 A, VGS = 0 VDS = 25 V, ID = 10 mA VDS = 160 V, VGS = 0 VGS = 30 V, VDS = 0 VGS = 10 V, ID = 25 A VDS = 25 V, ID = 25 A VDS = 25 V, VGS = 0, f = 1 MHz 15 2 Min 200
Typ
Max -1.5 4 100 1
Unit V V V A A m S pF pF pF ns ns ns ns ns nC
29 30 4 550 750 75 50 125 390 140 210 820
40
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004 SJG00035AED
22.00.5
(1.2)
Features
(23.4)
1
2SK3637
Electrical Characteristics (Continued) TC = 25C 3C
Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ 85 30 12 1.25 41.6 Max Unit nC nC nC C/W C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
103 IDP t = 100 s 102 ID DC 10 1 ms 10 ms 1 100 ms Non repetitive pulse TC = 25C
Drain current ID (A)
10-1
1
10
102
103
Drain-source voltage VDS (V)
2
SJG00035AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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